HM4435 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired
*.
The HM4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
GENERAL FEATURES
* VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V
* High Pow.
Image gallery
TAGS
Download (Size : 382.20KB)