HM4410A mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =30V,ID =12A RDS(ON) < 9.4mΩ @ VGS=10V RDS(ON) < 12.8mΩ @ VGS=4.5V
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characteri.
GENERAL FEATURES
* VDS =30V,ID =12A RDS(ON) < 9.4mΩ @ VGS=10V RDS(ON) < 12.8mΩ @ VGS=4.5V
Schematic diagram
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The HM4410A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
* VDS =30V,ID =12A RDS(ON) < 9.4mΩ @ VGS=10V RDS(ON) < 12.8mΩ @ VGS=4.5V.
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