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HM4409 - P-Channel Enhancement Mode Power MOSFET

Description

The +0 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -15A RDS(ON) < 10mΩ @ VGS=-10V RDS(ON).

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Other Datasheets by H&M Semiconductor

Part Number Description
HM4409A P-Channel Enhancement Mode Power MOSFET
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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+0 P-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -15A RDS(ON) < 10mΩ @ VGS=-10V RDS(ON) <15mΩ @ VGS=-4.
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