HM4260 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =60V,ID =19A RDS(ON) < 11.5mΩ @ VGS=10V
(Typ:9.1mΩ)
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche .
General Features
* VDS =60V,ID =19A RDS(ON) < 11.5mΩ @ VGS=10V
(Typ:9.1mΩ)
Schematic diagram
* High density.
The HM4260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =60V,ID =19A RDS(ON) < 11.5mΩ @ VGS=10V
(Typ:9.1mΩ)
Schematic dia.
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