HM3415B mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 47mΩ @ VGS=-4.5V ESD Rating: 2500V HBM
* High Power and current handing capability
* Lead free produ.
.It is ESD protested.
General Features
* VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 47mΩ @ VGS=-4.5V ES.
The HM3415B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
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