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HM2803D Datasheet, H&M Semiconductor

HM2803D mosfet equivalent, dual p-channel enhancement mode power mosfet.

HM2803D Avg. rating / M : 1.0 rating-11

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HM2803D Datasheet

Features and benefits


* VDS = -20V,ID = -5.0A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired
*.

Application

D1 D2 General Features
* VDS = -20V,ID = -5.0A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V
* High po.

Description

The HM2803D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D1 D2 General Features
* VDS = -.

Image gallery

HM2803D Page 1 HM2803D Page 2 HM2803D Page 3

TAGS

HM2803D
Dual
P-Channel
Enhancement
Mode
Power
MOSFET
H&M Semiconductor

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