HM250N03A Datasheet - H&M Semiconductor

HM250N03A N-Channel Enhancement Mode Power MOSFET

HM250N03A Features

* VDS =30V ,ID =250A RDS(ON) = 0.9mΩ (Typ) @ VGS=10V RDS(ON) = 1.8mΩ (Typ) @ VGS=4.5V

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation

Datasheet Details

HM250N03A

H&M Semiconductor

1.12 MB

N-channel enhancement mode power mosfet.

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