HM2341 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V
* High Power and current handing capability
* Lead fr.
GENERAL FEATURES
* VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VG.
The HM2341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* VDS = -30V,ID = .
Image gallery
TAGS
Download (Size : 494.54KB)