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HM2306 Datasheet, H&M Semiconductor

HM2306 mosfet equivalent, n-channel enhancement mode power mosfet.

HM2306 Avg. rating / M : 1.0 rating-11

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HM2306 Datasheet

Features and benefits


* VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V
* High Power and current handing capability
* Lead free pro.

Application


*Load switch
*Power management SOT-23 top view Package Marking And Ordering Information Device Marking Devic.

Description

The HM2306 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES
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Image gallery

HM2306 Page 1 HM2306 Page 2 HM2306 Page 3

TAGS

HM2306
N-Channel
Enhancement
Mode
Power
MOSFET
H&M Semiconductor

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