HM2301BKR mosfet equivalent, p-channel 20v (d-s) mosfet.
* RDS(ON)= 0.48Ω @VGS=-4.5V
* RDS(ON)= 0.67Ω @VGS=-2.5V
* RDS(ON)= 0.95Ω @VGS=-1.8V
* RDS(ON)= 2.20Ω @VGS=-1.5V
* Super high density cell design for e.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
FEATURES
* RDS(ON)= 0.48Ω.
The HM2301BKR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
APPLICATIONS
* Po.
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