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HM1N6035 Datasheet, H&M Semiconductor

HM1N6035 mosfet equivalent, silicon n-channel power mosfet.

HM1N6035 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 1.22MB)

HM1N6035 Datasheet
HM1N6035
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 1.22MB)

HM1N6035 Datasheet

Features and benefits

z Fast Switching z Low ON Resistance(Rdson≤10.5Ω) z Low Gate Charge (Typical Data:6.0nC) z Low Reverse transfer capacitances(Typical:4pF) z 100% Single Pulse avalanche e.

Application

Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating V.

Description

VDSS 600 HM1N60PR, the silicon N-channel Enhanced ID 1.0 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 which reduce the conduction loss, improve switching RDS(ON)Typ 9 performance and enhance the avalanche ene.

Image gallery

HM1N6035 Page 1 HM1N6035 Page 2 HM1N6035 Page 3

TAGS

HM1N6035
Silicon
N-Channel
Power
MOSFET
H&M Semiconductor

Manufacturer


H&M Semiconductor

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