HM1N6035 mosfet equivalent, silicon n-channel power mosfet.
z Fast Switching z Low ON Resistance(Rdson≤10.5Ω) z Low Gate Charge (Typical Data:6.0nC) z Low Reverse transfer capacitances(Typical:4pF) z 100% Single Pulse avalanche e.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
V.
VDSS
600
HM1N60PR, the silicon N-channel Enhanced
ID
1.0
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃)
3
which reduce the conduction loss, improve switching
RDS(ON)Typ
9
performance and enhance the avalanche ene.
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