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HM10DN06D Datasheet - H&M Semiconductor

HM10DN06D N-Channel Enhancement Mode Power MOSFET

The HM10DN06D is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications . The HM10DN06D meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliab.

HM10DN06D Features

* z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available DFN5X6-8L t op view Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gat

HM10DN06D Datasheet (1.50 MB)

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Datasheet Details

Part number:

HM10DN06D

Manufacturer:

H&M Semiconductor

File Size:

1.50 MB

Description:

N-channel enhancement mode power mosfet.

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TAGS

HM10DN06D N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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