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3401 Datasheet, H&M Semiconductor

3401 mosfet equivalent, p-channel enhancement mode power mosfet.

3401 Avg. rating / M : 1.0 rating-19

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3401 Datasheet

Features and benefits


* VDS = -30V,ID = -4.2A RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 72mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V
* High Power and current handing capability
* Lead fr.

Application

GENERAL FEATURES
* VDS = -30V,ID = -4.2A RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 72mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VG.

Description

The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES
* VDS = -30V,ID = .

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3401 Page 1 3401 Page 2 3401 Page 3

TAGS

3401
P-Channel
Enhancement
Mode
Power
MOSFET
3400
3402A
3402B
H&M Semiconductor

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