2314 Datasheet Text
HM2314B
N-Channel Enhancement Mode Power MOSFET
Description
The HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
General Features
- VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
D G
S Schematic diagram
Marking and pin assignment
Application
- Battery protection
- Load switch
- Power management
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
HM2314B
SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000...
