Description
Schottky Diode chips with Mo-barrier for switch mode power rectifiers with the following.
Features
- Guard-ring for stress protection.
- Extremely low forward voltage.
- 125 ℃ operation junction temperature.
- reverse avalanche behavior Mechanical Data: SB 3XX passivated Silicon Chip Demension(mm) 1,8x1,8 Thickness: 350 +- 20 µm Metallization: Top ( Anode ) : Al Ag Bottom ( Cathode) : TiNiAg
Forward Current(A) 3A Reverse Voltage (V):23, 43, 100 V Type SB320 SB340 SB3100
Chip size(mm)
VR(V)
VF(V)@25 C at If=1A
IRM@VRMM
at 25 C
1,8x1,8 1,8x1,8 1,8x1,8
23 V 43 V 100 V
440mV.