SB31xx-1.8 Description
Schottky Diode chips with Mo-barrier for switch mode power rectifiers with the following.
SB31xx-1.8 Key Features
- Guard-ring for stress protection
- Extremely low forward voltage
- 125 ℃ operation junction temperature
- reverse avalanche behavior Mechanical Data: SB 3XX passivated Silicon Chip Demension(mm) 1,8x1,8 Thickness: 350 +- 20 µm