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KC860W - PNP General Purpose Transistor

Features

  • Low current (max. 100 mA) Low voltage (max. 45 V). Transistors 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak collector current Peak base current Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range Symbol VCBO VCEO VEBO IC ICM IBM PD R JA Rating -50 -45 -5 -100 -200 -200 200 625 -65 to +150 Unit V V V mA mA mA mW K/W.

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Datasheet Details

Part number KC860W
Manufacturer Guangdong Kexin Industrial
File Size 91.24 KB
Description PNP General Purpose Transistor
Datasheet download datasheet KC860W Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com SMD Type PNP General Purpose Transistors KC860W(BC860W) Features Low current (max. 100 mA) Low voltage (max. 45 V). Transistors 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak collector current Peak base current Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range Symbol VCBO VCEO VEBO IC ICM IBM PD R JA Rating -50 -45 -5 -100 -200 -200 200 625 -65 to +150 Unit V V V mA mA mA mW K/W TJ, Tstg www.kexin.com.cn 1 www.DataSheet4U.
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