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KC817A - NPN Silicon AF Transistors

Features

  • +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Base current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICM IB PD Tj Tstg Rating 50 45 5 500 1 100 310 150 -65 to +150 Unit V V V mA A mA mW Electrical Characteristics Ta = 25 Parameter Collector-to-base bre.

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Datasheet Details

Part number KC817A
Manufacturer Guangdong Kexin Industrial
File Size 60.56 KB
Description NPN Silicon AF Transistors
Datasheet download datasheet KC817A Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com SMD Type NPN Silicon AF Transistors KC817A(BC817A) SOT-23 Transistors Unit: mm For general AF applications. +0.1 2.4-0.1 High collector current. High current gain. Low collector-emitter saturation voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.
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