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2SA1815 - PNP Epitaxial Planar Silicon Transistors

Key Features

  • 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -15 -12 -3 -50 250 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product.

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Datasheet Details

Part number 2SA1815
Manufacturer Guangdong Kexin Industrial
File Size 54.50 KB
Description PNP Epitaxial Planar Silicon Transistors
Datasheet download datasheet 2SA1815 Datasheet

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SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1815 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 www.DataSheet4U.com Unit: mm +0.1 2.4-0.1 High power gain:PG=25dB typ(f=100MHz) High cutoffrequency:fT=750MHz typ Low collector-to-emitter saturation voltage 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.