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Guangdong Kexin

2SB936A Datasheet Preview

2SB936A Datasheet

Silicon PNP epitaxial planar type Transistor

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SMD Type
Transistors
Silicon PNP Epitaxial Planar Type
2SB936A
Features
Low collector-emitter saturation voltage VCE(sat).
High-speed switching.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
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Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Collector-base cutoff curent
Emitter-base cutoff current
Forward current transfer ratio
Base-emitter saturation voltage
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
-50
-40
-5
-10
-20
1.3
150
-55 to +150
Unit
V
V
V
A
A
W
1 Base
2 Collector
3 Emitter
Symbol
Testconditons
VCEO IC = -10mA, IB = 0
ICBO VCB = -50 V,IE = 0
IEBO VEB = -5 V, IC = 0
VCE = -2 V, IC = -3 A
hFE
VCE = -2 V, IC = -0.1 A
VBE(sat) IC = -10 A, IB = -0.33 A
VCE(sat) IC = -10 A, IB = -0.33 A
fT VCE = -10 V, IC = -0.5 A , f = 10 MHz
Cob VCB = -10V , IE = 0 , f = 1.0MHz
ton
IC = -3 A,IB1 = -0.1 A,IB2 = 0.1 A,
tstg VCC = -20 V
tf
Min Typ Max Unit
-40 V
-50 ìA
-50 ìA
90 260
V
45
-1.5 V
-0.6 V
100 MHz
400 pF
0.1 ìs
0.5 ìs
0.1 ìs
hFE Classification
Rank
hFE
Q
90 180
P
130 260
www.kexin.com.cn 1


Part Number 2SB936A
Description Silicon PNP epitaxial planar type Transistor
Maker Guangdong Kexin
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2SB936A Datasheet PDF






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