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GreenPower

GP3134K Datasheet Preview

GP3134K Datasheet

20V N-Channel MOSFET

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Product Summary
V(BR)DSS
20V
RDS(on)MAX
380mΩ@4.5V
450mΩ@2.5V
800mΩ@1.8V
ID
0.75A
Feature
Lead Free Product is Acquired
Surface Mount Package
N-Channel Switch with Low RDS(on)
Operated at Low Logic Level Gate Drive
Application
Load/Power Switching
Interfacing Switching
Battery Management for Ultra Small Portable Electronics
Logic Level Shift
MARKING:
GP3134K
20V N-Channel MOSFET
SOT-723
Schematic diagram
ABSOLUTE MAXIMUM RATINGS (Ta=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current(1)
Pulsed Drain Current(tp=10μs)
Power Dissipation(1)
Thermal Resistance from Junction to Ambient(1)
VGS
ID
IDM
PD
RθJA
Junction Temperature
TJ
Storage Temperature
Lead Temperature for Soldering Purposes(1/8” from case for 10s)
TSTG
TL
Value
20
±12
0.75
1.8
150
833
150
-55~ +150
260
Unit
V
V
A
A
mW
/W
http://www.sh-greenpower.com
Shanghai GreenPower Electronic Co.Ltd.
1




GreenPower

GP3134K Datasheet Preview

GP3134K Datasheet

20V N-Channel MOSFET

No Preview Available !

MOSFET ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
20
Zero gate voltage drain current
IDSS VDS =20V,VGS = 0V
Gate-body leakage current
Gate threshold voltage(2)
IGSS
VGS(th)
VGS =±10V, VDS = 0V
VDS =VGS, ID =250µA
0.35
Drain-source on-resistance(2)
RDS(on)
VGS =4.5V, ID =650mA
VGS =2.5V, ID =550mA
VGS =1.8V, ID =450mA
Forward tranconductance
Dynamic characteristics(4)
gFS VDS =10V, ID =800mA
Input Capacitance
Ciss
Output Capacitance
Coss VDS=16V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
Switching Characteristics(4)
Turn-on delay time(3)
Turn-on rise time(3)
Turn-off delay time(3)
Turn-off fall time(3)
Crss
td(on)
tr
td(off)
tf
VDS=10V,ID=500mA,
VGS=4.5V,RG=10Ω
Source-Drain Diode characteristics
Diode Forward voltage(3)
Notes:
VDS IS=0.15A, VGS = 0V
1. Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test : Pulse Width=300μs, Duty Cycle=2%.
3. Switching characteristics are independent of operating junction temperatures.
4. Guaranteed by design, not subject to producting.
GP3134K
Type Max Unit
1
±20
1.1
270 380
320 450
390 800
1.6
V
µA
µA
V
mΩ
S
79 120
13 20 pF
9 15
6.7 ns
4.8 ns
17.3 ns
7.4 ns
1.2 V
http://www.sh-greenpower.com
Shanghai GreenPower Electronic Co.Ltd.
2


Part Number GP3134K
Description 20V N-Channel MOSFET
Maker GreenPower
Total Page 5 Pages
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