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GPT18N50CD - POWER FIELD EFFECT TRANSISTOR

This page provides the datasheet information for the GPT18N50CD, a member of the GPT18N50C POWER FIELD EFFECT TRANSISTOR family.

Features

  • This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offer.

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Datasheet Details

Part number GPT18N50CD
Manufacturer Greatpower
File Size 1.46 MB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT18N50CD Datasheet
Additional preview pages of the GPT18N50CD datasheet.

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Full PDF Text Transcription

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GPT18N50C / GPT18N50CD POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a fast recovery time.
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