GPT14N65 transistor equivalent, power field effect transistor.
* Robust High Voltage Termination
* Avalanche Energy Specified
* Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
* Diode .
in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits whe.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation .
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