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GPT13N65D - POWER FIELD EFFECT TRANSISTOR

Download the GPT13N65D datasheet PDF. This datasheet also covers the GPT13N65 variant, as both devices belong to the same power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Description

GPT13N65 / GPT13N65D POWER FIELD EFFECT TRANSISTOR

Features

  • This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GPT13N65-Greatpower.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GPT13N65D
Manufacturer Greatpower
File Size 290.07 KB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT13N65D Datasheet

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Other Datasheets by Greatpower

Part Number Description
GPT13N65 POWER FIELD EFFECT TRANSISTOR
GPT13N50 POWER FIELD EFFECT TRANSISTOR
GPT13N50C POWER FIELD EFFECT TRANSISTOR
GPT13N50CD POWER FIELD EFFECT TRANSISTOR
GPT13N50D POWER FIELD EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GENERAL DESCRIPTION GPT13N65 / GPT13N65D POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.