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GPT12N45D - POWER FIELD EFFECT TRANSISTOR

Download the GPT12N45D datasheet PDF. This datasheet also covers the GPT12N45 variant, as both devices belong to the same power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offer.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GPT12N45-Greatpower.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GPT12N45D
Manufacturer Greatpower
File Size 1.18 MB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT12N45D Datasheet

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Other Datasheets by Greatpower

Part Number Description
GPT12N45 POWER FIELD EFFECT TRANSISTOR
GPT12N50 POWER FIELD EFFECT TRANSISTOR
GPT12N50D POWER FIELD EFFECT TRANSISTOR
GPT12N60 POWER FIELD EFFECT TRANSISTOR
GPT12N60D POWER FIELD EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GPT12N45 / GPT12N45D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS and VDS(on) Specified at Elevated Temperature fast recovery time.
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