GPT05N70 transistor equivalent, power field effect transistor.
This advanced high voltage MOSFET is designed to withstand
* Higher Current Rating
high energy in the avalanche mode and switch efficiently. This
* Lower Rds(on.
such as power supplies, converters,
* Tighter VSD Specifications
power motor controls and bridge circuits.
* A.
FEATURES
This advanced high voltage MOSFET is designed to withstand
* Higher Current Rating
high energy in the avalanche mode and switch efficiently. This
* Lower Rds(on)
new high energy device also offers a drain-to-source diode
* Lo.
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