GPT04N60A transistor equivalent, power field effect transistor.
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-s.
such as power supplies, converters, power motor controls and bridge circuits.
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FEATURES
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high s.
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