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P9N70 Datasheet Preview

P9N70 Datasheet

SSFP9N70

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SSFP9N70
StarMOST Power MOSFET
Extremely high dv/dt capability
Low Gate Charge Qg results in
Simple Drive Requirement
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Description
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout
with planar stripe DMOS technology.
Application
Switching application
VDSS = 700V
ID25 = 7.5A
RDS(ON) = 1.2Ω
Pin1–Gate
Pin2–Drain
Pin1–Source
Absolute Maximum Ratings
ID@Tc=25ْ C
ID@Tc=100ْC
Parameter
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
IDM Pulsed Drain Current
PD@TC=25ْC Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
Max.
7.5
4.7
30
115
0.92
±30
230
7.5
15.5
4.5
55 to +175
300(1.6mm from case)
10 Ibfin(1.1Nm)
Units
A
W
W/ْ C
V
mJ
A
mJ
V/ns
ْC
Thermal Resistance
Parameter
Min. Typ. Max.
RθJC
Junction-to-case
— — 1.09
RθCS
Case-to-Sink,Flat,Greased Surface
0.50
RθJA Junction-to-Ambient
— — 62.5
Units
ْC/W
1




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P9N70 Datasheet Preview

P9N70 Datasheet

SSFP9N70

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SSFP9N70
StarMOST Power MOSFET
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 700
V VGS=0V,ID=250μA
V(BR)DSS/TJ Breakdown Voltage Temp.Coefficient 0.78 V/ْC Reference to 25ْC,ID=1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-resistance 1.0
Gate Threshold Voltage
3.0
1.2 Ω VGS=10V,ID=4A
4.5 V VDS=VGS,ID=250μA
gfs Forward Transconductance 5.3 S VDS=15V,ID=4A
IDSS
Drain-to-Source Leakage current
——
——
1 μA VDS=700V,VGS=0V
50 VDS=700V,VGS=0V,TJ=150ْC
Gate-to-Source Forward leakage
— — 100
VGS=30V
IGSS
Gate-to-Source Reverse leakage
nA
— — -100
VGS=-30V
Qg Total Gate Charge
48 68
ID=8A
Qgs Gate-to-Source charge
10
nC VDS=560V
Qgd
Gate-to-Drain("Miller") charge
27
VGS=10V
td(on)
Turn-on Delay Time
45
VDD=350V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
14
11
7
ID=4A
nS RG=4.7
VGS=10V
LD Internal Drain Inductance
4.5
Between lead,
6mm(0.25in.)
nH from package
LS
Internal Source Inductance
7.5
and center of
die contact
Ciss Input Capacitance
1370
VGS=0V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
143
32
pF VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
Continuous Source Current .
IS
(Body Diode)
Pulsed Source Current
ISM (Body Diode)
.
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
7.5
30
1.6
570
5.2
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ=25ْC,IS=7.5A,VGS=0V
nS TJ=25ْC,IF=8A
nC di/dt=100A/μs
ton Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
Repetitive rating;pulse width limited by
max.junction temperature(see figure 11)
L = 54mH, IAS = 7.5A, VDD = 50V,
RG = 25, Starting TJ = 25°C
ISD7.5A,di/dt200A/μS,VDDV(BR)DSS,
TJ25ْ C
Pulse width300μS; duty cycle1.5%
2


Part Number P9N70
Description SSFP9N70
Maker Good-Ark
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P9N70 Datasheet PDF






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