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GST2SD965 Datasheet Preview

GST2SD965 Datasheet

NPN General Purpose Transistor

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GST2SD965
NPN General Purpose Transistor
Product Description
This device is designed as a general purpose
amplifier and switch.
Features
„ Collector-Emitter Voltage : 22V
„ Collector Current : 5A
„ Lead(Pb)-Free
Packages & Pin Assignments
TO-92
Pin Description
1 Emitter
2 Collector
3 Base
Marking Information
P/N
GST2SD965F
Package
TO-92
Ordering Information
Rank
(R) / (T) / (V)
Part Marking
D965
Part Number
GST2SD965F(R or T or V)
Package
TO-92
Quantity
1000 PCS
www.gs-power.com 1




Globaltech

GST2SD965 Datasheet Preview

GST2SD965 Datasheet

NPN General Purpose Transistor

No Preview Available !

Absolute Maximum Ratings
(TA=25°C unless otherwise noted)
Symbol
Conditions
VCEO
VCBO
VEBO
IC(DC)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
PD Total Device Dissipation TA=25°C
TJ Junction Temperature Range
TSTG
Storage Temperature Range
Typical
22
42
6
5
750
-55 to +150
-55 to +150
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
(TA=25°C unless otherwise noted)
Symbol
Conditions
V(BR)CEO
Collector-Emitter Breakdown
Voltage (IC=1mA, IB=0mA)
V(BR)CBO
V(BR)EBO
ICBO
Collector-Base Breakdown
Voltage (IC=100uA, IE=0mA)
Emitter-Base Breakdown Voltage
(IE=10uA, IC=0mA)
Collector-Base Cutoff Current
(VCB=30V, IE=0mA)
IEBO
hFE (1)
hFE (2)
Emitter-Base Cutoff Current
(VEB=6V, IC=0mA)
DC Current Gain (IC=0.15mA,
VCE=2V)
DC Current Gain (IC=500mA,
VCE=2V)
hFE (3)
DC Current Gain (IC=2A, VCE=2V)
VCE(sat)
fT
Collector-Emitter Saturation
Voltage (IC=3A, IB=100mA)
Transition Frequency
(IC=50mA, VCE=6V,f=30MHz)
Classification of hFE(2)
Rank
Range
R
340-600
Min TYP
22 -
42 -
6-
--
--
150 -
340 -
150 -
--
- 150
T
560-950
Max
-
-
-
0.1
0.1
-
2000
-
0.35
-
Unit
V
V
V
uA
uA
-
-
-
V
MHz
V
900-2000
www.gs-power.com
2


Part Number GST2SD965
Description NPN General Purpose Transistor
Maker Globaltech
Total Page 5 Pages
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