Datasheet Details
| Part number | GSMDL6912 |
|---|---|
| Manufacturer | Globaltech |
| File Size | 493.98 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 GSMDL6912 Datasheet
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|
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| Part number | GSMDL6912 |
|---|---|
| Manufacturer | Globaltech |
| File Size | 493.98 KB |
| Description | N-Channel MOSFET |
| Datasheet |
GSMDL6912 Datasheet
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|
|
|
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
GSMDL6912 60V N-Channel MOSFETs Product.
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|---|---|
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| GSMDL0910 | N-Channel MOSFET |
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| GSMD35N15 | N-Channel MOSFET |
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| GSMDC0956Z | 100V N-Channel MOSFET |
| GSMDC0966X | N-Channel MOSFET |
| GSMDC2116M | N+P Dual-Channel MOSFET |