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GSMDL6912 - N-Channel MOSFET

Datasheet Details

Part number GSMDL6912
Manufacturer Globaltech
File Size 493.98 KB
Description N-Channel MOSFET
Datasheet download datasheet GSMDL6912 Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Overview

GSMDL6912 60V N-Channel MOSFETs Product

Key Features

  • 60V, 5A, RDS(ON)=90mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS guaranteed.
  • Green Device Available.
  • SOT-223 package design.