GSMDC3960X datasheet, mosfet equivalent, Globaltech

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Features and benefits

* 30V, 115A, RDS(ON)=2.4mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS guaranteed
* Green Device Available
* DFN5X6-8L package.

Application

Features
* 30V, 115A, RDS(ON)=2.4mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS gu.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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