GSMDC3812V mosfet equivalent, dual n-channel mosfet.
* 30V, 20A, RDS(ON)=20mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS guaranteed
* Green Device Available
* DFN3X3-8L package d.
Features
* 30V, 20A, RDS(ON)=20mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS guar.
These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 516.32KB)