RG4B Datasheet | General Semiconductor

FEATURES Case Style G4 0.180 (4.6) 0.115 (2.9) DIA. 1.0 (25.4) MIN. 0.300 (7.6) MAX. 0.042 (1.07) 0.038 (0.962) DIA. 1.0 (25.4) MIN. - High temperature metallurgically bonded construction - Glass passivated cavity-free junction - Capable of meeting environmental standards of MIL-S-19500 - Fast switching for fast efficiency - 3.0 Ampere operation at TA=50°C with no thermal runaway - Typical IR less than 0.1µA - Hermetically sealed package - High temperature soldering guaranteed: 350°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension - MECHANICAL DATA Dimensions in inches and (millimeters) - Brazed-lead assembly is covered by Patent No. 3,930,306 Case: Solid glass body Terminals: Solder plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.037 ounce, 1.04 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS RG4A RG4D RG4G RG4J UNITS Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375” (9.5mm) lead lengths at TA=55°C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 3.0A Maximum reverse current at rated DC blocking voltage Maximum average reverse current at peak reverse voltage Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) Operating junction and storage temperature range TA=25°C TA=100°C VRRM VRMS VDC I(AV) 50 35 50 100 70 100 200 140 200 3.0 400 280 400 600 420 600 Volts Volts Volts Amps IFSM VF IR IR(AV) trr CJ RΘJA TJ, TSTG 100.0 1.3 5.0 2.0 100.0 150 50.0 22.0 -65 to +175 250 Amps Volts µA µA ns p F °C/W °C NOTES: (1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHZ and applied...