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GFP60N03 - N-Channel Enhancement-Mode MOSFET

Features

  • Advanced Trench Process Technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Specially Designed for Low Voltage DC/DC Converters.
  • Fast Switching for High Efficiency 0.410 (10.41) 0.350 (8.89) G PIN D S 0.160 (4.06) 0.09 (2.28) 0.560 (14.22) 0.530 (13.46) Mechanical Data 0.037 (0.94) 0.026 (0.66) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.190 (4.83) 0.022 (0.56) 0.014 (0.36) Dimensions in inches and (millimeters).
  • May be notched or flat C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com GFP60N03 N-Channel Enhancement-Mode MOSFET TO-220AB 0.415 (10.54) Max. 0.154 (3.91) Dia. 0.142 (3.60) 0.113 (2.87) 0.102 (2.56) D H C N ct E ET u R d T ENF ro P New G ® 0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) VDS 30V RDS(ON) 11mΩ ID 60A D G * 0.155 (3.93) 0.134 (3.40) 0.603 (15.32) 0.573 (14.55) 0.635 (16.13) 0.580 (14.73) 0.360 (9.14) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.104 (2.64) 0.094 (2.39) S Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency 0.410 (10.41) 0.350 (8.89) G PIN D S 0.160 (4.06) 0.09 (2.28) 0.560 (14.22) 0.530 (13.46) Mechanical Data 0.037 (0.94) 0.026 (0.66) 0.105 (2.67) 0.095 (2.
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