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General Semiconductor

BC327 Datasheet Preview

BC327 Datasheet

Small Signal Transistors

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BC327, BC328
Small Signal Transistors (PNP)
TO-92
.181 (4.6)
.142 (3.6)
max..022 (0.55)
.098 (2.5)
CE
B
Dimensions in inches and (millimeters)
FEATURES
PNP Silicon Epitaxial Planar Transistors for
switching and amplifier applications. Espe-
cially suit-able for AF-driver stages and
low-power output stages.
These types are also available subdivided
into three groups -16, -25, and -40, according
to their DC current gain. As complementary
types, the NPN transistors BC337 and BC338 are
recommended.
On special request, these transistors are also
manufactured in the pin configuration TO-18.
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Collector-Emitter Voltage
Collector-Emitter Voltage
BC327
BC328
BC327
BC328
–VCES
–VCES
–VCEO
–VCEO
50
30
45
25
Emitter-Base Voltage
–VEBO
5
Collector Current
–IC 800
Peak Collector Current
–ICM
1
Base Current
–IB 100
Power Dissipation at Tamb = 25 °C
Ptot 6251)
Junction Temperature
Tj 150
Storage Temperature Range
TS –65 to +150
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Unit
V
V
V
V
V
mA
A
mA
mW
°C
°C
4/98




General Semiconductor

BC327 Datasheet Preview

BC327 Datasheet

Small Signal Transistors

No Preview Available !

BC327, BC328
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
DC Current Gain
at –VCE = 1 V, –IC = 100 mA
Current Gain Group-16
-25
-40
at –VCE = 1 V, –IC = 300 mA
Current Gain Group-16
-25
-40
hFE
hFE
hFE
hFE
hFE
hFE
100 160 250
160 250 400
250 400 630
60 130 –
100 200 –
170 320 –
Thermal Resistance Junction to Ambient Air
RthJA
2001)
Collector-Emitter Cutoff Current
at –VCE = 45 V
at –VCE = 25 V
BC327 –ICES
2
100
BC328 –ICES
2
100
at –VCE = 45 V, Tamb = 125 °C
BC327 –ICES
10
at –VCE = 25 V, Tamb = 125 °C
BC328 –ICES
10
Collector-Emitter Breakdown Voltage
at –IC = 10 mA
BC327
BC328
V(BR)CEO
V(BR)CEO
45
25
Collector-Emitter Breakdown Voltage
at –IC = 0.1 mA
BC327
BC328
V(BR)CES
V(BR)CES
50
30
Emitter-Base Breakdown Voltage
at –IE = 0.1 mA
– 5––
V(BR)EBO
Collector Saturation Voltage
at –IC = 500 mA, –IB = 50 mA
–VCEsat
0.7
Base-Emitter Voltage
at –VCE = 1 V, –IC = 300 mA
–VBE
1.2
Gain-Bandwidth Product
fT – 100 –
at –VCE = 5 V, –IC = 10 mA, f = 50 MHz
Collector-Base Capacitance
at –VCB = 10 V, f = 1 MHz
CCBO
12 –
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Unit
K/W
nA
nA
µA
µA
V
V
V
V
V
V
V
MHz
pF


Part Number BC327
Description Small Signal Transistors
Maker General Semiconductor
Total Page 5 Pages
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