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S85B - Silicon Standard Recovery Diode

Key Features

  • High Surge Capability.
  • Types from 100 V to 600 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S85B thru S85JR VRRM = 100 V - 600 V IF =85 A AC DO-5 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S85B (R) S85D (R) S85G (R) Repetitive peak reverse voltage RMS reverse voltage DC block.

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Datasheet Details

Part number S85B
Manufacturer GeneSiC
File Size 784.42 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet S85B Datasheet

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Other Datasheets by GeneSiC

Part Number Description
S85BR Silicon Standard Recovery Diode
S85D Silicon Standard Recovery Diode
S85DR Silicon Standard Recovery Diode
S85G Silicon Standard Recovery Diode
S85GR Silicon Standard Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 100 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S85B thru S85JR VRRM = 100 V - 600 V IF =85 A AC DO-5 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S85B (R) S85D (R) S85G (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 140 °C TC = 25 °C, tp = 8.