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S320MR - Silicon Standard Recovery Diode

Download the S320MR datasheet PDF. This datasheet also covers the S320J variant, as both devices belong to the same silicon standard recovery diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Surge Capability.
  • Types from 600 V to 1200 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S320J thru S320QR VRRM = 600 V - 1200 V IF = 320 A AC CA Stud Stud (R) DO-9 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S320J (R) S320K (R) S320M (R) S320Q (R) Repetitive peak reverse voltage RMS revers.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (S320J-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number S320MR
Manufacturer GeneSiC
File Size 730.57 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet S320MR Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S320J thru S320QR VRRM = 600 V - 1200 V IF = 320 A AC CA Stud Stud (R) DO-9 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S320J (R) S320K (R) S320M (R) S320Q (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.