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S150M - Silicon Standard Recovery Diode

Download the S150M datasheet PDF. This datasheet also covers the S150J variant, as both devices belong to the same silicon standard recovery diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types from 600 V to 1200 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S150J thru S150QR VRRM = 600 V - 1200 V IF =150 A AC DO-8 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S150J (R) S150K (R) S150M (R) S150Q (R) Repetitive peak reverse voltage RMS revers.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (S150J-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number S150M
Manufacturer GeneSiC
File Size 762.99 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet S150M Datasheet

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Other Datasheets by GeneSiC

Part Number Description
S150MR Silicon Standard Recovery Diode
S150J Silicon Standard Recovery Diode
S150JR Silicon Standard Recovery Diode
S150K Silicon Standard Recovery Diode
S150KR Silicon Standard Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S150J thru S150QR VRRM = 600 V - 1200 V IF =150 A AC DO-8 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S150J (R) S150K (R) S150M (R) S150Q (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 180 °C TC = 25 °C, tp = 8.