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MURT40005 - Silicon Super Fast Recovery Diode

Key Features

  • High Surge Capability.
  • Types from 50 V to 200 V VRRM.
  • Isolation Type Package.
  • Electrically Isolated base plate.
  • Not ESD Sensitive MURT40005 thru MURT40020R VRRM = 50 V - 200 V IF(AV) = 400 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURT40005(R) MURT40010(R) MURT40020(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltag.

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Datasheet Details

Part number MURT40005
Manufacturer GeneSiC
File Size 686.83 KB
Description Silicon Super Fast Recovery Diode
Datasheet download datasheet MURT40005 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Isolation Type Package • Electrically Isolated base plate • Not ESD Sensitive MURT40005 thru MURT40020R VRRM = 50 V - 200 V IF(AV) = 400 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURT40005(R) MURT40010(R) MURT40020(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 50 35 50 -55 to 150 -55 to 150 100 71 100 -55 to 150 -55 to 150 200 141 200 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MURT40005(R)