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MUR5060 - Silicon Super Fast Recovery Diode

Download the MUR5060 datasheet PDF. This datasheet also covers the MUR5040 variant, as both devices belong to the same silicon super fast recovery diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Surge Capability.
  • Types from 400 V to 600 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MUR5040 thru MUR5060R VRRM = 400 V - 600 V IF = 50 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR5040 (R) MUR5060 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Contin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MUR5040-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MUR5060
Manufacturer GeneSiC
File Size 666.93 KB
Description Silicon Super Fast Recovery Diode
Datasheet download datasheet MUR5060 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 400 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MUR5040 thru MUR5060R VRRM = 400 V - 600 V IF = 50 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR5040 (R) MUR5060 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 125 °C 400 280 400 50 600 420 600 50 Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.