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MUR2510R - (MUR2505 - MUR2520R) Silicon Super Fast Recovery Diode

Download the MUR2510R datasheet PDF. This datasheet also covers the MUR2505 variant, as both devices belong to the same (mur2505 - mur2520r) silicon super fast recovery diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Surge Capability.
  • Types up to 600 V VRRM DO-4 Package VRRM = 50 V - 600 V IF = 25 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 145 °C TC = 25 °C, tp = 8.3 ms Conditions MUR2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MUR2505_GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MUR2510R
Manufacturer GeneSiC
File Size 503.45 KB
Description (MUR2505 - MUR2520R) Silicon Super Fast Recovery Diode
Datasheet download datasheet MUR2510R Datasheet

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Other Datasheets by GeneSiC

Part Number Description
MUR2510 (MUR2505 - MUR2520R) Silicon Super Fast Recovery Diode
MUR2505 (MUR2505 - MUR2520R) Silicon Super Fast Recovery Diode
MUR2505R (MUR2505 - MUR2520R) Silicon Super Fast Recovery Diode
MUR2520 (MUR2505 - MUR2520R) Silicon Super Fast Recovery Diode
MUR2520R (MUR2505 - MUR2520R) Silicon Super Fast Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MUR2505 thru MUR2520R Silicon Super Fast Recovery Diode Features • High Surge Capability • Types up to 600 V VRRM DO-4 Package VRRM = 50 V - 600 V IF = 25 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 145 °C TC = 25 °C, tp = 8.