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MUR10010CT - Silicon Super Fast Recovery Diode

Download the MUR10010CT datasheet PDF. This datasheet also covers the MUR10005CT variant, as both devices belong to the same silicon super fast recovery diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types from 50 V to 200 V VRRM.
  • Not ESD Sensitive MUR10005CT thru MUR10020CTR VRRM = 50 V - 200 V IF(AV) = 100 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR10005CT(R) MUR10010CT(R) MUR10020CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 50 35.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MUR10005CT-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MUR10010CT
Manufacturer GeneSiC
File Size 687.04 KB
Description Silicon Super Fast Recovery Diode
Datasheet download datasheet MUR10010CT Datasheet

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Other Datasheets by GeneSiC

Part Number Description
MUR10010CTR Silicon Super Fast Recovery Diode
MUR10005CT Silicon Super Fast Recovery Diode
MUR10005CTR Silicon Super Fast Recovery Diode
MUR10020CT Silicon Super Fast Recovery Diode
MUR10020CTR Silicon Super Fast Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive MUR10005CT thru MUR10020CTR VRRM = 50 V - 200 V IF(AV) = 100 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR10005CT(R) MUR10010CT(R) MUR10020CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 50 35 50 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 200 140 200 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MUR10005CT(R) MUR10010CT(R) MUR10020CT(R) Unit Average forward curren