Not ESD Sensitive
MUR10005CT thru MUR10020CTR
VRRM = 50 V - 200 V IF(AV) = 100 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MUR10005CT(R) MUR10010CT(R) MUR10020CT(R) Unit
Repetitive peak reverse voltage
RMS reverse voltage DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
50
35.
Full PDF Text Transcription for MUR10005CT (Reference)
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MUR10005CT. For precise diagrams, and layout, please refer to the original PDF.
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive MUR10005CT thru MUR10020CTR VRRM = 50 V - 200 V IF(...
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Not ESD Sensitive MUR10005CT thru MUR10020CTR VRRM = 50 V - 200 V IF(AV) = 100 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR10005CT(R) MUR10010CT(R) MUR10020CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 50 35 50 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 200 140 200 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MUR10005CT(R) MUR
MUR10005CT Datasheet
