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Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 600 V to 1000 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive
MSRT20060(A)D thru MSRT200100(A)D
VRRM = 600 V - 1000 V IF(AV) = 200 A
Three Tower Package
MSRT200XXAD MSRT200XXADR MSRT200XXD
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MSRT20060(A)D
MSRT20080(A)D MSRT200100(A)D
Unit
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature
VRRM VRMS VDC
Tj Tstg
600 424 600 -55 to 150 -55 to 150
800 566 800 -55 to 150 -55 to 150
1000 707 1000 -55 to 150 -55 to 150
V V V °C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
C
MSRT20060D Datasheet
