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MSRT20060AD - Silicon Standard Recovery Diode

Download the MSRT20060AD datasheet PDF. This datasheet also covers the MSRT20060D variant, as both devices belong to the same silicon standard recovery diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types from 600 V to 1000 V VRRM.
  • Isolation Type Package.
  • Electrically Isolated Base Plate.
  • Not ESD Sensitive MSRT20060(A)D thru MSRT200100(A)D VRRM = 600 V - 1000 V IF(AV) = 200 A Three Tower Package MSRT200XXAD MSRT200XXADR MSRT200XXD Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MSRT20060(A)D MSRT20080(A)D MSRT200100(A)D Unit Repetitive peak reverse voltage RMS reverse voltag.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSRT20060D-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MSRT20060AD
Manufacturer GeneSiC
File Size 661.63 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet MSRT20060AD Datasheet

📁 Similar Datasheet

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MSRT200120 Silicon Standard Recovery Diode America Semiconductor

Other Datasheets by GeneSiC

Part Number Description
MSRT20060D Silicon Standard Recovery Diode
MSRT200100AD Silicon Standard Recovery Diode
MSRT200100D Silicon Standard Recovery Diode
MSRT20080AD Silicon Standard Recovery Diode
MSRT20080D Silicon Standard Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1000 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MSRT20060(A)D thru MSRT200100(A)D VRRM = 600 V - 1000 V IF(AV) = 200 A Three Tower Package MSRT200XXAD MSRT200XXADR MSRT200XXD Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MSRT20060(A)D MSRT20080(A)D MSRT200100(A)D Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 600 424 600 -55 to 150 -55 to 150 800 566 800 -55 to 150 -55 to 150 1000 707 1000 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol C