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MBRT60020 - Silicon Power Schottky Diode

Key Features

  • High Surge Capability.
  • Types from 20 V to 40 V VRRM.
  • Isolation Type Package.
  • Electrically Isolated Base Plate.
  • Not ESD Sensitive MBRT60020 thru MBRT60040R VRRM = 20 V - 40 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRT60020(R) MBRT60030(R) MBRT60035(R) MBRT60040(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC block.

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Datasheet Details

Part number MBRT60020
Manufacturer GeneSiC
File Size 459.65 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBRT60020 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT60020 thru MBRT60040R VRRM = 20 V - 40 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRT60020(R) MBRT60030(R) MBRT60035(R) MBRT60040(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter S