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MBRT600100R - Silicon Power Schottky Diode

Download the MBRT600100R datasheet PDF. This datasheet also covers the MBRT60045 variant, as both devices belong to the same silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types from 45 V to 100 V VRRM.
  • Isolation Type Package.
  • Electrically Isolated Base Plate.
  • Not ESD Sensitive MBRT60045 thru MBRT600100R VRRM = 45 V - 100 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRT60045(R) MBRT60060(R) MBRT60080(R) MBRT600100(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC b.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBRT60045-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBRT600100R
Manufacturer GeneSiC
File Size 684.33 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBRT600100R Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MBRT600100R Silicon Power Schottky Diode America Semiconductor
MBRT600100 Silicon Power Schottky Diode America Semiconductor
MBRT60020 Silicon Power Schottky Diode America Semiconductor
MBRT60020R Silicon Power Schottky Diode America Semiconductor
MBRT60030 Silicon Power Schottky Diode America Semiconductor

Other Datasheets by GeneSiC

Part Number Description
MBRT600100 Silicon Power Schottky Diode
MBRT60020 Silicon Power Schottky Diode
MBRT60020R Silicon Power Schottky Diode
MBRT60030 Silicon Power Schottky Diode
MBRT60030R Silicon Power Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT60045 thru MBRT600100R VRRM = 45 V - 100 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRT60045(R) MBRT60060(R) MBRT60080(R) MBRT600100(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 60 42 60 -55 to 150 -55 to 150 80 56 80 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parame