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MBRT12045 - Silicon Power Schottky Diode

Key Features

  • High Surge Capability.
  • Types from 45 V to 100 V VRRM.
  • Isolation Type Package.
  • Electrically Isolated Base Plate.
  • Not ESD Sensitive MBRT12045 thru MBRT120100R VRRM = 45 V - 100 V IF(AV) = 120 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRT12045(R) MBRT12060(R) MBRT12080(R) MBRT120100(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC b.

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Datasheet Details

Part number MBRT12045
Manufacturer GeneSiC
File Size 787.53 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBRT12045 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT12045 thru MBRT120100R VRRM = 45 V - 100 V IF(AV) = 120 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRT12045(R) MBRT12060(R) MBRT12080(R) MBRT120100(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 60 42 60 -55 to 150 -55 to 150 80 56 80 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parame