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MBRH240150 - Silicon Power Schottky Diode

Key Features

  • High Surge Capability.
  • Types from 150 V to 200 V VRRM.
  • Not ESD Sensitive MBRH240150 thru MBRH240200R VRRM = 150 V - 200 V IF(AV) = 240 A D-67 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRH240150(R) MBRH240200(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 150 106 150 -55 to 150 -55.

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Datasheet Details

Part number MBRH240150
Manufacturer GeneSiC
File Size 650.53 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBRH240150 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive MBRH240150 thru MBRH240200R VRRM = 150 V - 200 V IF(AV) = 240 A D-67 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRH240150(R) MBRH240200(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 150 106 150 -55 to 150 -55 to 150 200 141 150 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBRH240150(R) Average forward current (per pkg) IF(AV) TC = 125 °C 240 Peak forward surge current IFSM tp = 8.