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MBRH12020R - Silicon Power Schottky Diode

Download the MBRH12020R datasheet PDF. This datasheet also covers the MBRH12020 variant, as both devices belong to the same silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Surge Capability.
  • Types up to 100 V VRRM D-67 Package VRRM = 20 V - 100 V IF = 120 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 136 °C TC = 25 °C, tp = 8.3 ms Conditions MBRH120.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBRH12020-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBRH12020R
Manufacturer GeneSiC
File Size 494.36 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBRH12020R Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MBRH12020 thru MBRH12040R Silicon Power Schottky Diode Features • High Surge Capability • Types up to 100 V VRRM D-67 Package VRRM = 20 V - 100 V IF = 120 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 136 °C TC = 25 °C, tp = 8.
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