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MBR3535R - Silicon Power Schottky Diode

Download the MBR3535R datasheet PDF. This datasheet also covers the MBR3520 variant, as both devices belong to the same silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Surge Capability.
  • Types from 20 V to 40 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR3520 thru MBR3540R VRRM = 20 V - 40 V IF = 35 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR3520(R) MBR3530(R) MBR3535(R) MBR3540(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR3520-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBR3535R
Manufacturer GeneSiC
File Size 774.63 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBR3535R Datasheet

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Other Datasheets by GeneSiC

Part Number Description
MBR3535 Silicon Power Schottky Diode
MBR3530 Silicon Power Schottky Diode
MBR3530R Silicon Power Schottky Diode
MBR3520 Silicon Power Schottky Diode
MBR3520R Silicon Power Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR3520 thru MBR3540R VRRM = 20 V - 40 V IF = 35 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR3520(R) MBR3530(R) MBR3535(R) MBR3540(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 110 °C TC = 25 °C, tp = 8.
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